bta26 a/b btb26 b march 1995 standard triacs symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) bta tc = 90 c25 a btb tc = 90 c30 i tsm non repetitive surge peak on-state current ( tj initial = 25 c) tp = 8.3 ms 260 a tp = 10 ms 250 i 2 ti 2 t value tp = 10 ms 312.5 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 500ma di g /dt = 1a/ m s repetitive f = 50 hz 10 a/ m s non repetitive 50 tstg tj storage and operating junction temperature range - 40 to + 150 - 40 to + 125 c c tl maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 c top 3 (plastic) a1 a2 g . high surge current capability . commutation : (dv/dt)c > 10v/ m s . bta family : insulating voltage = 2500v (rms) (ul recognized : e81734) description symbol parameter bta26-...a/b / btb26-... b unit 400 600 700 800 v drm v rrm repetitive peak off-state voltage tj = 125 c 400 600 700 800 v absolute ratings (limiting values) features the bta26 a/b / btb26 b triac family are high performance glass passivated pnpn devices. these parts are suitables for general purpose ap- plications where high surge current capability is re- quired. application such as phase control and static switching on inductive or resistive load. 1/5
gate characteristics (maximum values) symbol parameter value unit rth (j-a) junction to ambient 50 c/w rth (j-c) dc junction to case for dc bta 1.5 c/w btb 1.1 rth (j-c) ac junction to case for 360 conduction angle ( f= 50 hz) bta 1.1 c/w btb 0.8 symbol test conditions quadrant suffix unit ab i gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 100 50 ma iv max 150 100 v gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii-iv max 1.5 v v gd v d =v drm r l =3.3k w tj=125 c i-ii-iii-iv min 0.2 v tgt v d =v drm i g = 500ma di g /dt = 3a/ m s tj=25 c i-ii-iii-iv typ 2.5 m s i l i g =1.2 i gt tj=25 c i-iii-iv typ 70 60 ma ii 200 180 i h *i t = 500ma gate open tj=25 c max 100 80 ma v tm *i tm = 35a tp= 380 m s tj=25 c max 1.7 v i drm i rrm v drm rated v rrm rated tj=25 c max 0.01 ma tj=125 c max 6 dv/dt * linear slope up to v d =67%v drm gate open tj=125 c min 250 250 v/ m s (dv/dt)c * (di/dt)c = 11.1a/ms bta (di/dt)c = 13.3a/ms btb tj=125 c min 10 v/ m s * for either polarity of electrode a 2 voltage with reference to electrode a 1 . p g (av) =1w p gm = 40w (tp = 20 m s) i gm =8a(tp=20 m s) v gm = 16v (tp = 20 m s). electrical characteristics thermal resistances bta26 a/b / btb26 b 2/5
ordering information package i t(rms) v drm /v rrm sensitivity specification av a b bta (insulated) 26 400 x x 600 x x 700 x x 800 x x btb (uninsulated) 30 400 x 600 x 700 x 800 x fig.1 : maximum rms power dissipation versus rms on-state current (f=50hz). (curves are cut off by (di/dt)c limitation) (bta) fig.4 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (btb). fig.3 : maximum rms power dissipation versus rms on-state current (f=50hz). (curves are cut off by (di/dt)c limitation) (btb) fig.2 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (bta). bta26 a/b / btb26 b 3/5
fig.8 : relative variation of gate trigger current and holding current versus junction temperature. fig.9 : non repetitive surge peak on-state current versus number of cycles. fig.10 : non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of i 2 t. 1e-3 1e-2 1e-1 1e +0 1 e+1 1 e+2 1 e +3 0.01 0.10 1.00 zth/rth zth( j-c) zt h( j-a) tp(s) fig.7 : relative variation of thermal impedance versus pulse duration. fig.5 : rms on-state current versus case temperature. (bta) fig.6 : rms on-state current versus case temperature. (btb) bta26 a/b / btb26 b 4/5
fig.11 : on-state characteristics (maximum values). package mechanical data top 3 plastic cooling method : c marking : type number weight : 4.7 g recommended torque value : 0.8 m.n. maximum torqur value : 1 m.n. h r4.6 c a g d b p nn l m j i ref. dimensions millimeters inches min. max. min. max. a 15.10 15.50 0.594 0.611 b 20.70 21.10 0.814 0.831 c 14.30 15.60 0.561 0.615 d 16.10 16.50 0.632 0.650 g 3.40 - 0.133 - h 4.40 4.60 0.173 0.182 i 4.08 4.17 0.161 0.164 j 1.45 1.55 0.057 0.062 l 0.50 0.70 0.019 0.028 m 2.70 2.90 0.106 0.115 n 5.40 5.65 0.212 0.223 p 1.20 1.40 0.047 0.056 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the nether- lands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. bta26 a/b / btb26 b 5/5
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